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  this is information on a product in full production. june 2013 docid024745 rev 1 1/17 17 STGW20H60DF, stgwt20h60df 600 v, 20 a high speed trench gate field-stop igbt datasheet - production data figure 1. internal schematic diagram features ? high speed switching ? tight parameters distribution ? safe paralleling ? low thermal resistance ? short-circuit rated ? ultrafast soft recovery antiparallel diode applications ? motor control ? ups, pfc description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. this igbt series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. to-247 to-3p 1 2 3 1 2 3 tab c (2, tab) e (3) g (1) table 1. device summary order codes marking packages packaging STGW20H60DF gw20h60df to-247 tube stgwt20h60df gwt20h60df to-3p tube www.st.com
contents STGW20H60DF, stgwt20h60df 2/17 docid024745 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid024745 rev 1 3/17 STGW20H60DF, stgwt20h60df electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 40 a continuous collector current at t c = 100 c 20 a i cp (1) 1. limited by maximum junction temperature. pulsed collector current 80 a v ge gate-emitter voltage 20 v i f continuous forward current t c = 25 c 40 a continuous forward current at t c = 100 c 20 i fp (2) 2. pulse width limited by maximum junction temperature and turn-off within rbsoa. pulsed forward current 80 a p tot total dissipation at t c = 25 c 167 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.9 c/w r thjc thermal resistance junction-case diode 2.5 c/w r thja thermal resistance junction-ambient 62.5 c/w
electrical characteristics STGW20H60DF, stgwt20h60df 4/17 docid024745 rev 1 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 20 a 1.6 2.0 v v ge = 15 v, i c = 20 a t j = 125 c 1.75 v ge = 15 v, i c = 20 a t j = 175 c 1.8 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -2750- pf c oes output capacitance - 110 - pf c res reverse transfer capacitance -65-pf q g total gate charge v cc = 400 v, i c = 20 a, v ge = 15 v -115-nc q ge gate-emitter charge - 22 - nc q gc gate-collector charge - 45 - nc
docid024745 rev 1 5/17 STGW20H60DF, stgwt20h60df electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v 42.5 - ns t r current rise time 11.9 - ns (di/dt)on turn-on current slope 1345 - a/ s t d(on) turn-on delay time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v t j = 175 c 42.5 - ns t r current rise time 13.4 ns (di/dt)on turn-on current slope 1180 a/ s t r(voff) off voltage rise time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v 20 - ns t d(off) turn-off delay time 177 - ns t f current fall time 55 - ns t r(voff) off voltage rise time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v t j = 175 c 26 - ns t d(off) turn-off delay time 173 - ns t f current fall time 86 - ns t sc short-circuit withstand time v cc 360 v, v ge = 15 v 3 5 - s table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v - 209 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 261 - j e ts total switching losses - 470 - j eon (1) turn-on switching losses v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v t j = 175 c - 480 - j e off (2) turn-off switching losses - 416 - j e ts total switching losses - 896 - j
electrical characteristics STGW20H60DF, stgwt20h60df 6/17 docid024745 rev 1 table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 20 a i f = 20 a, t j = 175 c - 1.8 1.3 2.2 v v t rr reverse recovery time v r = 60 v; if = 20 a; di f /dt = 100 a / s -90-ns q rr reverse recovery charge 110 nc i rrm reverse recovery current 2.4 a t rr reverse recovery time v r = 60 v; if = 20 a; di f /dt = 100 a / s t j = 175 c - 180 - ns q rr reverse recovery charge - 466 - nc i rrm reverse recovery current - 5.2 - a
docid024745 rev 1 7/17 STGW20H60DF, stgwt20h60df electrical characteristics 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) figure 4. transfer characteristics figure 5. normalized v ge(th) vs junction temperature 9 v i c 60 40 20 0 02 v ce (v) 4 (a) 13 80 100 15 v 13 v 11 v am16287v1 9 v 7 v 15 v i c 60 40 20 0 02 v ce (v) 4 (a) 13 80 100 13 v 11 v am16288v1 25 c i c 60 40 20 0 79 v ge (v) 11 (a) 810 80 100 175 c -40 c v ce = 5 v am16289v1 v ce = v ge i c = 1 ma v ge(th) 0.9 0.8 0.7 0.6 -75 25 t j (c) 125 (norm) -25 75 1 am16292v1
electrical characteristics STGW20H60DF, stgwt20h60df 8/17 docid024745 rev 1 figure 6. collector current vs. case temperature figure 7. collector current vs. frequency figure 8. v ce(sat) vs. junction temperature figure 9. v ce(sat) vs. collector current figure 10. forward bias safe operating area figure 11. thermal impedance i c 24 16 8 0 050 t c (c) 100 (a) 25 75 32 40 125 am16282v1 i c 30 20 10 1 f(khz) (a) t c = 80 c rectangular current shape (duty cycle= 0.5, v cc = 400 v r g = 10 , v ge = 0/15v, tj= 175 c 10 40 t c = 100 c 50 60 am162981v1 v ce(sat) 1.9 1.7 1.5 1.3 -75 25 t j (c) 125 (v) -25 75 2.1 2.3 i c = 40 a v ge = 15 v i c = 20 a i c = 10 a am16290v1 v ce(sat) 2.2 1.8 1.4 1.0 020 i c (a) (v) 10 30 v ge = 15 v t j = 175 c t j = -40 c t j = 25 c am16291v1 (single pulse t c =25c, t j <=175c; v ge =15v) i c 10 1 0.1 1 100 v ce (v) (a) 10 1 ms 100 s v ce(sat) limit am16280v1 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp single pulse =0.5 zthto2t_b
docid024745 rev 1 9/17 STGW20H60DF, stgwt20h60df electrical characteristics figure 12. diode v f vs. forward current figure 13. gate charge vs. gate-emitter voltage figure 14. capacitance variations vs. v ce figure 15. switching losses vs. gate resistance figure 16. switching losses vs. collector current figure 17. switching losses vs. temperature v f 1.9 1.5 1.1 10 50 i f (a) (v) 30 t j = -40 c 20 40 2.3 t j = 25 c t j = 175 c am16293v1 v ge 8 4 0 0 q g (nc) (v) 80 v cc = 400 v i c = 20 a 40 120 12 16 am16294v1 c 1000 100 10 0.1 v ce (v) (pf) 10 c oes 1 c ies c res am16295v1 e 550 450 350 0 r g ( ) (j) 20 e off 10 e on 30 40 650 750 v cc = 400 v, v ge = 15v, i c = 20 a, t j = 175c am16296v1 e 600 400 200 10 i c ( a ) (j) 20 e off e on 30 800 1000 v cc = 400 v, v ge = 15v, r g = 10 , t j = 175c am162961v1 e 400 300 200 25 t j ( c ) (j) 75 e off e on 125 v cc = 400 v, v ge = 15v, r g = 10 , i c = 20 a am16297v1
electrical characteristics STGW20H60DF, stgwt20h60df 10/17 docid024745 rev 1 figure 18. short-circuit time and current vs. v ge figure 19. power dissipation vs. case temperature t sc 12 8 4 10 v ge (v) (s) 11 t sc i sc 12 v cc = 360 v, r g = 10 13 14 16 i sc (a) 50 150 250 350 am16298v1 p tot 120 80 40 0 050 t c (c) 125 (w) 25 75 160 100 150 am16281v1
docid024745 rev 1 11/17 STGW20H60DF, stgwt20h60df test circuits 3 test circuits figure 20. test circuit for inductive load switching figure 21. gate charge test circuit figure 22. switching waveform figure 23. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data STGW20H60DF, stgwt20h60df 12/17 docid024745 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024745 rev 1 13/17 STGW20H60DF, stgwt20h60df package mechanical data figure 24. to-247 drawing 0075325_g
package mechanical data STGW20H60DF, stgwt20h60df 14/17 docid024745 rev 1 table 10. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
docid024745 rev 1 15/17 STGW20H60DF, stgwt20h60df package mechanical data figure 25. to-3p drawing 8045950_a
revision history STGW20H60DF, stgwt20h60df 16/17 docid024745 rev 1 5 revision history table 11. document revision history date revision changes 06-jun-2013 1 initial release.
docid024745 rev 1 17/17 STGW20H60DF, stgwt20h60df please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com


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